ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,586, issued on April 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and meth... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,587, issued on April 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Backside power rail to deep vias" was invented by ... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,588, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device and semiconductor mem... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,589, issued on April 21. "FCNVM-ALEFD (fully covered non-volatile memory (NVM) over advanced low electrostatic field transistor (ALEFD)" w... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,590, issued on April 21, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor device and method for fabri... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,591, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China). "Semiconductor structure and fabrication method... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,592, issued on April 21, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Structure with buried doped region and methods to form ... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,593, issued on April 21, was assigned to Diodes Inc. (Plano, Texas). "Power MOSFET with gate-source ESD diode structure" was invented by W... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,594, issued on April 21, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device and power conversion apparatus" was inve... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,595, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Integrated circuit device" was invented by... Read More